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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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ST733C..L SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Hockey Puk Version
940A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ
ST733C..L
940 55 1900 25 20000 20950 2000 1820 400 to 800 10 to 20 - 40 to 125
Units
A C A C A A KA2s KA2s V s
C
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ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
Index
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V DRM /V RRM , maximum repetitive peak voltage V
VRSM , maximum non-repetitive peak voltage V
500
I DRM /I RRM max.
@ TJ = TJ max.
mA
75
04 ST733C..L 08
400 800
900
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 2200 2050 1370 500 50 V DRM 50 40
ITM 180oel 1900 1660 1070 370 50 50 55 3580 3600 2900 1220 50 V DRM 40
ITM 100s 3100 3130 2450 980 50 55 6800 3750 2120 960 50 V DRM 40
ITM
Units
5920 3240 1780 770 50 55 V A/s C A
10 / 0.47F
10 / 0.47F
10 / 0.47F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
ST733C..L
940 (350) 55 (85) 1900 20000 20950 16800 17600
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
It
2
Maximum I t for fusing
2
2000 1820 1410 1290
I 2 t
Maximum I2t for fusing
20000
t = 0.1 to 10ms, no voltage reapplied
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Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
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Fig. 8 - Maximum Non-repetitive Surge Current
Previous Datasheet ST733C..L Series
1E 5 S nub b e r c ircuit R s = 1 0 o hm s C s = 0 .47 F V D = 8 0% V DRM 1E 4
Index
S T 73 3C..L S e rie s T ra p e zo id a l p uls e T C = 4 0C d i/ d t = 50A / s S nub b e r c irc uit R s = 10 o hm s C s = 0.47 F V D = 80% V DRM
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ST 733C..L S e rie s T ra p e zo id a l p uls e T C = 55C d i/ d t = 50A / s
tp
1000 5 00 1E 3 1 500 2000 25 00 3 000 5000 1E 2 1E 1
400 200 100
50 H z 1000 1500 2000 2500 300 0 500
100 400 200
50 H z
1E 2
1E3
1E 4 1E 1 1 1E 4 1E
1E 2
1E 3
1E 4
P uls e B a s e wid th (s )
Pu ls e Ba s e wid th (s)
Fig. 14 - Frequency Characteristics
1E 5 S nub b e r c irc uit R s = 10 o hm s C s = 0 .47 F V D = 8 0% V DRM 1E 4 50 H z 500 1000 1500 2000 2500 3000 1E 2 1E 3 1E 4 1E 1 1 1 E 4 1E S T 73 3C..L S e rie s T ra p e zo id a l p uls e T C = 4 0C d i/ d t = 10 0A / s S nub b e r c irc uit R s = 10 o hm s C s = 0.47 F V D = 80% V DRM ST 733C..L S e rie s T ra p e zo id a l p uls e T C = 55C d i/ d t = 100A/ s
tp
5 00 1E 3 2 500 3 00 0 5 00 0 1E 2 1E 1 100 0 15 00 2 00 0
4 00
2 00 1 00
100 50 H z 400 200
1E 2
1E 3
1E 4
P u ls e B a s e w id th ( s )
P uls e Ba s e wid th (s )
Fig. 15 - Frequency Characteristics
1 E5 ST7 33 C ..L Se rie s Sin u so id a l p u lse tp 1 E4 3 2 1 E3 0.5 0.4 1 E2 0.3 0 .4 0 .3 1 E1 1 E1 0 .5 1 2 1 5 10 5 3 10 20 jo u le s p e r p u lse 2 0 jo u le s p e r p u lse tp ST7 33 C ..L Se rie s Re c t a n g u la r p u lse d i/ d t = 50 A / s
1 E2
1 E3
1 E4E4 E1 1 1 1 E1
1 E2
1 E3
1 E4
P u lse B a se w id t h ( s)
P u lse B a se w id t h ( s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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100 R e cta ng ula r g ate p uls e a ) Re c o m m e nd e d lo a d line for rate d d i/ d t : 20V , 10ohm s ; tr<=1 s b ) Re c o m m e nd e d lo a d line for <=30% ra te d d i/ d t : 10V , 10ohm s tr<=1 s 10
Index
Next Data SheetSeries ST733C..L
(1) P GM = 10 W , tp (2) P GM = 20 W , tp (3) P GM = 40 W , tp (4) P GM = 60 W , tp = 20m s = 10m s = 5m s = 3.3m s
(a ) (b )
1 (1) VGD IGD D e v ice : S T 733C..L S e rie s 0 .1 0.001 0.01 0.1 1 F re q ue nc y Lim ite d b y P G (A V ) 10 100 (2) (3) (4)
Ins tanta ne o us Ga te Curre nt (A)
Fig. 17 - Gate Characteristics
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Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJC Characteristic
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
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On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r t1 r t2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current 0.32
Index
Next ST733C..L Series Data Sheet
ST733C..L
1.63 1.09 1.20
Units
Conditions
ITM= 1700A, TJ = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max.
m 0.29 600 1000 mA
T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G= 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Min Max. turn-off time 10
ST733C..L
1000 1.5 Max 20
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM, ITM = 2 x di/dt Gate pulse: 20V 20, 10s 0.5s rise time TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 550A, commutating di/dt = -40A/s VR = 50V, tp = 500s, dv/dt: see table in device code
s
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST733C..L
500 75
Units
V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST733C..L
60 10 10 20
Units
W A
Conditions
TJ = TJ max., f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
TJ = TJ max, tp 5ms
TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied
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Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
Index
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ST733C..L
-40 to 125 -40 to 150 0.073 0.031 0.011 0.005 14700 (1500)
Units Conditions
C DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
K/W
wt
Approximate weight Case style
255
TO - 200AC (B-PUK)
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
Single Side Double Side 0.009 0.011 0.014 0.020 0.036 0.009 0.011 0.014 0.021 0.036 Single Side Double Side 0.006 0.011 0.015 0.021 0.036 0.006 0.011 0.015 0.022 0.036
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
73
2
3
3
C
4
08
5
L
6
H
7
K
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - Reapplied dv/dt code (for tq test condition) dv/dt - tq combinations available
50 DN DM DL DP DK 100 EN EM EL EP EK 200 -FM * FL * FP FK 400 --HL HP H
8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
dv/dt (V/s) 20 10 CN 12 CM tq (s) 15 CL 18 CP 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 20 CK
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
* Standard part number. All other types available only on request.
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Outline Table
0.7 (0.03) MIN. 2 7 (1 .0 6 ) M AX .
Index
Next ST733C..L Series Data Sheet
34 (1.34) DIA. MAX. TWO PLACES
PIN RECEPTACLE AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
6.2 (0.24) MIN.
20 5 5 8 .5 (2 .3 ) D IA . M AX . 4.7 (0.18)
36.5 (1.44) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN.
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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